Influence of the doping profile and deep level trap characteristics on generation-recombination noise

Generation-recombination ~g-r! noise originated by the fluctuating occupancy of deep level traps in the depletion regions of a junction field effect transistor ~JFET! has been thoroughly analyzed. A numerical simulator of this type of device, which allows us to calculate all relevant electrical magnitudes in the structure, was used to calculate the noise power spectral density. To check our simulator, comparisons with experimental data of g-r noise in JFETs were made, showing very good agreement. Our numerical results have provided useful information about the influence on noise of several aspects such as the modelling of the shallow doping profile, and the relative contribution of each junction of the device on the total noise. In addition, the energetic position of deep levels in the band gap and the relative concentration of deep and shallow impurities were all combined to quantify the noise spectral density and to locate the region of the structure that contributes the most to the g-r noise. This report clearly shows the importance of including all technological parameters for a correct interpretation and study of low-frequency noise in JFETs. © 1997 American Institute of Physics. @S0021-8979~97!05219-5#